Conference item

Long wavelength photoresponse of short period InAs/GaSb superlattices

Abstract:: We have performed interband photoconductivity experiments at 2 K on a series of superlattices with different layer thicknesses. We show that the band gap is indeed tunable and measure values ranging from 5 to 20 mu m for the first time on samples grown by metal-organic vapour phase epitaxy. An 8 band k.p calculation is used to estimate the band gap and also to fit the interband Landau level transitions throughout the semiconducting layer thicknesses range.

Publication status:: Published

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APA Style

Lakrimi, M., Vaughan, T., Nicholas, R., Mason, N., & Walker, P. (1995). Long wavelength photoresponse of short period InAs/GaSb superlattices. 144, 287–291.

MLA Style

Lakrimi, M., et al. Long Wavelength Photoresponse of Short Period InAs/GaSb Superlattices. no. 144, 1995, pp. 287–91.

Chicago Style

Lakrimi, M, T Vaughan, R Nicholas, N Mason, and P Walker. 1995. “Long Wavelength Photoresponse of Short Period InAs/GaSb Superlattices.” In , 287–91.
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Authors

+ Lakrimi, M More by this author

Role:: Author

+ Vaughan, T More by this author

Role:: Author

+ Nicholas, R More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Physics
Sub department:: Condensed Matter Physics
Role:: Author

+ Mason, N More by this author

Role:: Author

+ Walker, P More by this author

Role:: Author

Journal:: NARROW GAP SEMICONDUCTORS 1995 More from this journal
Issue:: 144
Pages:: 287-291
Publication date:: 1995-01-01
Event title:: 7th International Conference on Narrow Gap Semiconductors
ISSN:: 0951-3248
ISBN:: 0750303417

Keywords:: SEMICONDUCTOR SUPERLATTICE
Pubs id:: pubs:28545
UUID:: uuid:70c03c25-d8db-49b2-8573-f0b4f695946a
Local pid:: pubs:28545
Source identifiers:: 28545
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1995

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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