THE EFFECT OF OXYGEN AND HYDROGEN ON THE BRITTLE DUCTILE TRANSITION OF SILICON - ORA - Oxford University Research Archive

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THE EFFECT OF OXYGEN AND HYDROGEN ON THE BRITTLE DUCTILE TRANSITION OF SILICON

Publication status:: Published

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APA Style

Haasen, P., Brede, M., & Zhang, T. (2016). THE EFFECT OF OXYGEN AND HYDROGEN ON THE BRITTLE DUCTILE TRANSITION OF SILICON. STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 104, 361–372.

MLA Style

Haasen, P., et al. “THE EFFECT OF OXYGEN AND HYDROGEN ON THE BRITTLE DUCTILE TRANSITION OF SILICON.” STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, vol. 104, 2016, pp. 361–72.

Chicago Style

Haasen, P, M Brede, and T Zhang. 2016. “THE EFFECT OF OXYGEN AND HYDROGEN ON THE BRITTLE DUCTILE TRANSITION OF SILICON.” In STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 104:361–72.
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+ Haasen, P More by this author

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+ Brede, M More by this author

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+ Zhang, T More by this author

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Bibliographic Details

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989
Volume:: 104
Pages:: 361-372
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
Source identifiers:: 6777
ISBN:: 0854980601

Item Description

Keywords:: TOPOGRAPHY

DISLOCATION EMISSION

CRACK TIPS
Pubs id:: pubs:6777
UUID:: uuid:6fee2e12-80dd-4f5c-81b5-82d0df07449d
Local pid:: pubs:6777
Deposit date:: 2012-12-19

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Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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