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Mechanism for secondary electron dopant contrast in the SEM

Abstract:

The growing use of secondary electron imaging in the scanning electron microscope (SEM) to map dopant distributions has stimulated an increasing interest in the mechanism that gives rise to so-called dopant contrast. In this paper a range of experimental results are used to demonstrate the wide applicability of the technique. These results are then incorporated into a model where, in particular, the effect of the surface barrier and the vacuum level are considered. It is found that the domina...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Publisher:
Published for the Japanese Society of Electron Microscopy by Oxford University Press
Journal:
Journal of electron microscopy
Volume:
49
Issue:
2
Pages:
311-321
Publication date:
2000
DOI:
EISSN:
1477-9986
ISSN:
0022-0744
URN:
uuid:6e9eff79-5e47-463d-a071-5448ce4a2492
Source identifiers:
23668
Local pid:
pubs:23668

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