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Single shot measurement of a silicon single electron transistor

Publication status:: Published

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APA Style

Hasko, D., Ferrus, T., Morrissey, Q., Burge, S. R., Freeman, E., French, M., Lam, A., Creswell, L., Collier, R., Williams, D., & Briggs, G. (2008). Single shot measurement of a silicon single electron transistor. APPLIED PHYSICS LETTERS, 93(19), 192116–192116.

MLA Style

Hasko, D., et al. “Single Shot Measurement of a Silicon Single Electron Transistor.” APPLIED PHYSICS LETTERS, vol. 93, no. 19, 2008, pp. 192116–16.

Chicago Style

Hasko, D, T Ferrus, Q Morrissey, SR Burge, E Freeman, M French, A Lam, et al. 2008. “Single Shot Measurement of a Silicon Single Electron Transistor.” APPLIED PHYSICS LETTERS 93 (19): 192116–16.
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Publisher copy:: 10.1063/1.3028344

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+ Hasko, D More by this author

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+ Ferrus, T More by this author

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+ Morrissey, Q More by this author

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+ Burge, SR More by this author

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+ Freeman, E More by this author

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Bibliographic Details

Journal:: APPLIED PHYSICS LETTERS
Volume:: 93
Issue:: 19
Pages:: 192116-192116
Publication date:: 2008-11-10
DOI:: 10.1063/1.3028344
ISSN:: 0003-6951

Item Description

Keywords:: single electron transistors

CMOS integrated circuits

phosphorus

elemental semiconductors

silicon
Pubs id:: pubs:83903
UUID:: uuid:6deca98a-936a-4e9a-ad4d-7433d5c135dd
Local pid:: pubs:83903
Source identifiers:: 83903
Deposit date:: 2012-12-19

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Copyright date:: 2008

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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