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The brittle-ductile transition in silicon. I. experiments

Abstract:

The experiments described in this paper investigate the fundamental processes involved in the brittle-ductile transition (BDT) in silicon, and form the basis of a new theoretical model (see following paper). The fracture (or bending) stresses of four-point bend specimens of silicon containing semicircular surface cracks, introduced by surface indentation, were determined over a range of temperatures and strain rates. A sharp transition, characterized by a rapid increase in fracture stress wit...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1098/rspa.1989.0001

Authors


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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Science and Engineering Research Council More from this funder
B. P. International Ltd More from this funder
Publisher:
Royal Society Publisher's website
Journal:
Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences Journal website
Volume:
421
Issue:
1860
Pages:
1-23
Publication date:
1989-01-09
DOI:
EISSN:
1471-2946
ISSN:
1364-5021
URN:
uuid:6de9c398-0b32-47c1-81be-4084d5baeac4
Source identifiers:
1908
Local pid:
pubs:1908

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