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Specimen preparation methods for elemental characterisation of grain boundaries and isolated dislocations in multicrystalline silicon using atom probe tomography

Abstract:

Multicrystalline silicon (mc-Si) is a cost effective feedstock for solar photovoltaic devices but is limited by the presence of defects and impurities. Imaging impurities segregated to nanometre-scale dislocations and grain boundaries is a challenge that few materials characterisation techniques can achieve. Atom Probe Tomography (APT) is a 3-dimensional time-of-flight microscopy technique that can image the distribution of elements at the atomic scale, however one of the most challenging fac...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1016/j.matchar.2017.07.038

Authors


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Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
More from this funder
Name:
Engineering and Physical Sciences Research Council
Grant:
EP/M024911/1/
Publisher:
Elsevier
Journal:
Materials Characterization More from this journal
Volume:
131
Pages:
472-479
Publication date:
2017-07-22
Acceptance date:
2017-07-20
DOI:
EISSN:
1873-4189
ISSN:
1044-5803
Keywords:
Pubs id:
pubs:713577
UUID:
uuid:6dc4ced3-77e3-4d03-89ec-2bd68c3ae99f
Local pid:
pubs:713577
Source identifiers:
713577
Deposit date:
2017-10-10

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