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Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion

Abstract:

Nanocrystalline silicon carbide (nc-SiC) is an interesting material for electronics applications, both in its own right and as a host matrix for silicon quantum dots. When synthesized by annealing of a-SiC:H on Si substrates, interdiffusion of dopants occurs if either the a-SiC:H or the Si substrate is doped. Annealing a-SiC:H on highly boron-doped substrates at 1100°C leads to a fairly homogeneous doping level of ≥ 4×10 19cm-3 throughout the nc-SiC film. An unexpected anomaly in secondary ...

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Publication status:
Published

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Publisher copy:
10.1063/1.4890030

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Publisher:
American Institute of Physics Inc.
Journal:
JOURNAL OF APPLIED PHYSICS
Volume:
116
Issue:
2
Pages:
024315-024315
Publication date:
2014-07-14
DOI:
EISSN:
1089-7550
ISSN:
0021-8979
URN:
uuid:6db773bc-4676-4bda-bf7b-7904f2ee79c3
Source identifiers:
482961
Local pid:
pubs:482961
Language:
English

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