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Controlling the carriers of topological insulators by bulk and surface doping

Abstract:

We report a systematic study of bulk and surface chemical doping effects on single Dirac cone topological insulator Bi2Se3 and Bi2Te3. By bulk doping, we were able to achieve full range control of charge carrier types and concentration, with the exact Fermi energy measured by angle-resolved photoemission spectroscopy (ARPES). Due to the unusual robustness of the topological surface state, we further realized the bi-polar control of the surface carriers by gaseous or alkaline surface doping wi...

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Publication status:
Published

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Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY More from this journal
Volume:
27
Issue:
12
Pages:
124002-124002
Publication date:
2012-12-01
DOI:
EISSN:
1361-6641
ISSN:
0268-1242
Language:
English
Pubs id:
pubs:368168
UUID:
uuid:6ce9cfb5-332e-45c6-92ce-8f6923f1c300
Local pid:
pubs:368168
Source identifiers:
368168
Deposit date:
2013-11-16

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