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Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking

Abstract:

A measurement of nitrogen out-diffusion from nitrogen-doped float-zone silicon made using a dislocation locking technique is presented. Specimens containing a well-defined array of dislocation half-loops are subjected to identical anneals at 750°C, during which nitrogen diffuses both to the surface and to the dislocations. The specimens are then chemically etched so as to remove different thicknesses of material from the surface. The stress required to move the dislocations away from the nitr...

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Publication status:
Published

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Publisher copy:
10.1002/pssa.200675457

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Journal:
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE More from this journal
Volume:
204
Issue:
7
Pages:
2256-2260
Publication date:
2007-07-01
DOI:
EISSN:
1862-6319
ISSN:
0031-8965
Language:
English
Pubs id:
pubs:11230
UUID:
uuid:6bf48f6a-c33a-4f0d-bcfc-58b15488a930
Local pid:
pubs:11230
Source identifiers:
11230
Deposit date:
2012-12-19

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