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Domain Matching Epitaxial Growth of In2O3 Thin Films on alpha-Al2O3(0001)

Abstract:

Oxygen plasma assisted molecular beam epitaxy was used to grow thin films of In 2O 3 on α-Al 2O 3(0001) over a range of substrate temperatures between 300 and 750 °C. The crystal structures and morphologies were examined by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. In all cases, the thermodynamically stable bodycentered cubic phase bcc-In 2O 3 predominates in the films, with an epitaxial relationship In 2O 3(111)||Al 2O 3(0001) and In 2O 3 [11̄10]||Al 2...

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Publication status:
Published

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Publisher copy:
10.1021/cg201474h

Authors


Zhang, KHL More by this author
Lazarov, VK More by this author
Galindo, PL More by this author
Oropeza, FE More by this author
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Journal:
CRYSTAL GROWTH and DESIGN
Volume:
12
Issue:
2
Pages:
1000-1007
Publication date:
2012-02-05
DOI:
EISSN:
1528-7505
ISSN:
1528-7483
URN:
uuid:6a8dc8a8-a6be-4413-b176-17154c9e1d40
Source identifiers:
317162
Local pid:
pubs:317162

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