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Journal article

Electron-optical sectioning for three-dimensional imaging of crystal defect structures

Abstract:

The depth of field of an optical imaging system is proportional to the inverse square of the numerical aperture. The development of electron-optical devices to correct for the inherent spherical aberration of electron optics has led to a dramatic increase in numerical aperture that therefore also result in dramatic reductions in depth of field. The depth of field of a state-of-the-art system may now reach below 5 nm. An opportunity is therefore created to measure three-dimensional information...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1016/j.mssp.2016.09.041

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Oxford college:
Corpus Christi College
Role:
Author
Publisher:
Elsevier Publisher's website
Journal:
Materials Science in Semiconductor Processing Journal website
Volume:
65
Pages:
18-23
Publication date:
2016-10-27
Acceptance date:
2016-09-29
DOI:
EISSN:
1873-4081
ISSN:
1369-8001
Keywords:
Pubs id:
pubs:719230
UUID:
uuid:6a799a59-2799-4ab3-bcb8-3402d82ec459
Local pid:
pubs:719230
Source identifiers:
719230
Deposit date:
2017-10-13

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