Journal article
High-performance all 2D-layered tin disulfide: Graphene photodetecting transistors with thickness-controlled interface dynamics
- Abstract:
-
Tin disulfide crystals with layered two-dimensional (2D) sheets are grown by chemical vapor deposition using a novel precursor approach and integrated into all 2D transistors with graphene (Gr) electrodes. The Gr:SnS2:Gr transistors exhibit excellent photodetector response with high detectivity and photoresponsivity. We show that the response of the all 2D photodetectors depends upon charge trapping at the interface and the Schottky barrier modulation. The thickness-dependent SnS2 measurement...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
Actions
Authors
Funding
Royal Society
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Taiwan Government
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Bibliographic Details
- Publisher:
- American Chemical Society Publisher's website
- Journal:
- ACS Applied Materials and Interfaces Journal website
- Volume:
- 10
- Issue:
- 15
- Pages:
- 13002–13010
- Publication date:
- 2018-04-09
- Acceptance date:
- 2018-03-29
- DOI:
- EISSN:
-
1944-8252
- ISSN:
-
1944-8244
- Pmid:
-
29630341
Item Description
- Language:
- English
- Keywords:
- Pubs id:
-
pubs:835155
- UUID:
-
uuid:690c5f58-941a-424b-ba77-58ad0d52a121
- Local pid:
- pubs:835155
- Source identifiers:
-
835155
- Deposit date:
- 2018-04-16
Terms of use
- Copyright holder:
- American Chemical Society
- Copyright date:
- 2018
- Notes:
- © 2018 American Chemical Society. This is the accepted manuscript version of the article. The final version is available online from American Chemical Society at: 10.1021/acsami.8b01038
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