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Surface ionisation of molecular H-2 and atomic H Rydberg states at doped silicon surfaces

Abstract:

The detection of ions or electrons from the surface ionisation of molecular H2 and atomic H Rydberg states incident at doped Si surfaces is investigated experimentally to analyse the effect of the dopant charge distribution on the surface-ionisation processes. In both experimental studies, the molecular H2 and atomic H Rydberg states are generated via two-colour vacuum ultraviolet--ultraviolet (VUV-UV) resonant excitation. For H2, various Stark states of the N+ = 2, n = 17 manifold are popula...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Physical & Theoretical Chem
Role:
Author
Journal:
MOLECULAR PHYSICS
Volume:
112
Issue:
18
Pages:
2495-2503
Publication date:
2014-01-01
DOI:
EISSN:
1362-3028
ISSN:
0026-8976
Source identifiers:
480711
Language:
English
Keywords:
Pubs id:
pubs:480711
UUID:
uuid:68aeb8d2-459c-4349-bcd5-6691bc4a9ba9
Local pid:
pubs:480711
Deposit date:
2014-09-17

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