Conference item
Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects
- Abstract:
- Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission and reflection. A non-thermal electron distribution with a pronounced "cut-off" at E-LO is observed for up to similar to 3 ps after photoexcitation. Monte Carlo simulations show that this behaviour is due to a remarkably strong electron-LO phonon interaction. Excitonic effects are also pronounced and strongly influence the dynamics. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
- Publication status:
- Published
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- Publisher copy:
- 10.1016/S0921-4526(99)00311-7
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Bibliographic Details
- Journal:
- PHYSICA B
- Volume:
- 272
- Issue:
- 1-4
- Pages:
- 402-405
- Publication date:
- 1999-12-01
- Event title:
- 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 11)
- DOI:
- ISSN:
-
0921-4526
- Source identifiers:
-
20049
Item Description
- Keywords:
- Pubs id:
-
pubs:20049
- UUID:
-
uuid:68927f37-94bc-4808-b2e3-521dccea54e9
- Local pid:
- pubs:20049
- Deposit date:
- 2012-12-19
Terms of use
- Copyright date:
- 1999
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