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Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects

Abstract:
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission and reflection. A non-thermal electron distribution with a pronounced "cut-off" at E-LO is observed for up to similar to 3 ps after photoexcitation. Monte Carlo simulations show that this behaviour is due to a remarkably strong electron-LO phonon interaction. Excitonic effects are also pronounced and strongly influence the dynamics. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
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Journal:
PHYSICA B
Volume:
272
Issue:
1-4
Pages:
402-405
Publication date:
1999-12-01
Event title:
11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 11)
DOI:
ISSN:
0921-4526
Source identifiers:
20049
Keywords:
Pubs id:
pubs:20049
UUID:
uuid:68927f37-94bc-4808-b2e3-521dccea54e9
Local pid:
pubs:20049
Deposit date:
2012-12-19

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