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Enhanced excitonic interactions in doped quantum wells in high magnetic fields

Abstract:

We report a strong enhancement and transformation of the Fermi edge singularity at high magnetic fields in a series of doped GaAs-Al33%Ga67%As quantum wells with width varying from 68 Angstrom to 150 Angstrom with carrier densities similar to4 (.) 10(11)cm(-2). We explain this behavior in terms of a resonance process due to collective excitations of the 2D system created by interband absorption. Such a collective excitation or "Mahan" trion occurs whenever a pair of electrons with a total mom...

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II
Volume:
87
Pages:
989-990
Publication date:
2001-01-01
Event title:
25th International Conference on the Physics of Semiconductors (ICPS25)
ISSN:
0930-8989
Source identifiers:
24054
ISBN:
3540417788
Keywords:
Pubs id:
pubs:24054
UUID:
uuid:673f78cc-8a00-47e0-a17a-517a39684a81
Local pid:
pubs:24054
Deposit date:
2012-12-19

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