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Thesis

Electronic transport in semiconductors

Abstract:

The first part of this thesis is a study of thermally activated conduction, Hall effect, and Far-Infrared absorption in n-InP. Accurate measurements of threshold energies are deduced from the temperature dependence of these effects, after correction for Fermi level variations, and it is shown that the threshold for electrical conduction is higher than for Hall effect, or cyclotron resonance. An explanation is given in terms of the long range impurity potential fluctuations.

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Institution:
University of Oxford
Division:
MPLS
Role:
Author

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Role:
Supervisor
Role:
Supervisor
Publication date:
1985
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford
Source identifiers:
602831409
Language:
English
Subjects:
UUID:
uuid:673168c2-1dc4-4b49-a5b4-d2c20a8e8fb3
Local pid:
td:602831409
Deposit date:
2014-07-22

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