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Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs

Abstract:

We have performed a magnetotransport study in both perpendicular and parallel magnetic fields for gated InAs/GaSb double heterostructures. These measurements provide a further proof for the existence of a minigap at the anti-crossing point between the electron and hole dispersion relations in this system. When a parallel magnetic field is increased from 0 to 12 T, the resistivity drops by 60% when the Fermi energy is in the middle of the minigap, but by less ;than 3% when the Fermi energy is ...

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
Journal:
PHYSICA B-CONDENSED MATTER
Volume:
256
Pages:
264-267
Publication date:
1998-12-01
Event title:
13th International Conference on High Magnetic Fields in Semiconductor Physics
DOI:
ISSN:
0921-4526
Keywords:
Pubs id:
pubs:20081
UUID:
uuid:65b2659c-d540-488f-94ca-6f697c6aa450
Local pid:
pubs:20081
Source identifiers:
20081
Deposit date:
2012-12-19

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