Conference
Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs
- Abstract:
-
We have performed a magnetotransport study in both perpendicular and parallel magnetic fields for gated InAs/GaSb double heterostructures. These measurements provide a further proof for the existence of a minigap at the anti-crossing point between the electron and hole dispersion relations in this system. When a parallel magnetic field is increased from 0 to 12 T, the resistivity drops by 60% when the Fermi energy is in the middle of the minigap, but by less ;than 3% when the Fermi energy is ...
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- Publication status:
- Published
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- Publisher copy:
- 10.1016/S0921-4526(98)00496-7
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Bibliographic Details
- Volume:
- 256
- Pages:
- 264-267
- Publication date:
- 1998-12-05
- DOI:
- ISSN:
-
0921-4526
- URN:
-
uuid:65b2659c-d540-488f-94ca-6f697c6aa450
- Source identifiers:
-
20081
- Local pid:
- pubs:20081
Item Description
Terms of use
- Copyright date:
- 1998
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