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TEM investigations of Si ion-implanted GaN

Publication status:: Published

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APA Style

Zou, J., Cockayne, D., Duan, X., Tan, H., Williams, J., Pearton, S., & Stall, S. A. (2016). TEM investigations of Si ion-implanted GaN. ELECTRON MICROSCOPY 1998, VOL 3, 481–482.

MLA Style

Zou, J., et al. “TEM Investigations of Si Ion-Implanted GaN.” ELECTRON MICROSCOPY 1998, VOL 3, 2016, pp. 481–82.

Chicago Style

Zou, J, D Cockayne, X Duan, H Tan, J Williams, S Pearton, and SA Stall. 2016. “TEM Investigations of Si Ion-Implanted GaN.” In ELECTRON MICROSCOPY 1998, VOL 3, 481–82.
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+ Cockayne, D More by this author

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+ Duan, X More by this author

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+ Williams, J More by this author

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Bibliographic Details

Journal:: ELECTRON MICROSCOPY 1998, VOL 3
Pages:: 481-482
Publication date:: 1998-01-01
Event title:: 14th International Congress on Electron Microscopy
Source identifiers:: 24394
ISBN:: 0750305665

Item Description

Pubs id:: pubs:24394
UUID:: uuid:656f9e0c-b4ec-4866-b08d-c648531806c3
Local pid:: pubs:24394
Deposit date:: 2012-12-19

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Copyright date:: 1998

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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