- Abstract:
-
We report the low temperature (T < 70 °C) fabrication of ZnO thin films (∼140 nm) with Hall mobility of up to 17.3 cm 2 V -1 s -1 making them suitable for thin film transistor (TFT) applications. The films were deposited by rf magnetron sputtering at T < 70 °C and subsequently laser processed in ambient temperature in order to modify the Hall mobility and carrier concentration. Medium-to-low energy laser radiation densities and a high number of pulses were used to avoid damaging ...
Expand abstract - Publication status:
- Published
- Peer review status:
- Peer reviewed
- Version:
- Accepted Manuscript
- Publisher copy:
- 10.1088/1361-6463/aa9316
-
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- Publisher:
- IOP Publishing Publisher's website
- Journal:
- Journal of Physics D: Applied Physics Journal website
- Volume:
- 50
- Issue:
- 48
- Pages:
- Article: 485306
- Publication date:
- 2017-11-10
- Acceptance date:
- 2017-10-12
- DOI:
- EISSN:
-
1361-6463
- ISSN:
-
0022-3727
- Pubs id:
-
pubs:795403
- URN:
-
uri:6554195f-a422-4712-9ee4-2d36d71eed7f
- UUID:
-
uuid:6554195f-a422-4712-9ee4-2d36d71eed7f
- Local pid:
- pubs:795403
- Copyright holder:
- IOP Publishing Ltd
- Copyright date:
- 2017
- Notes:
- Copyright © 2017 IOP Publishing Ltd.
Journal article
Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing
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