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Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

Abstract:

We report the low temperature (T < 70 °C) fabrication of ZnO thin films (∼140 nm) with Hall mobility of up to 17.3 cm 2 V -1 s -1 making them suitable for thin film transistor (TFT) applications. The films were deposited by rf magnetron sputtering at T < 70 °C and subsequently laser processed in ambient temperature in order to modify the Hall mobility and carrier concentration. Medium-to-low energy laser radiation densities and a high number of pulses were used to avoid damaging ...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted Manuscript

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Publisher copy:
10.1088/1361-6463/aa9316

Authors


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ORCID:
0000-0002-7342-3405
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Institution:
University of Oxford
Division:
MPLS Division
Department:
Chemistry; Inorganic Chemistry
Cranton, W More by this author
Kalfagiannis, N More by this author
Abusabee, KM More by this author
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Publisher:
IOP Publishing Publisher's website
Journal:
Journal of Physics D: Applied Physics Journal website
Volume:
50
Issue:
48
Pages:
Article: 485306
Publication date:
2017-11-10
Acceptance date:
2017-10-12
DOI:
EISSN:
1361-6463
ISSN:
0022-3727
Pubs id:
pubs:795403
URN:
uri:6554195f-a422-4712-9ee4-2d36d71eed7f
UUID:
uuid:6554195f-a422-4712-9ee4-2d36d71eed7f
Local pid:
pubs:795403

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