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Hot carrier relaxation by extreme electron-LO phonon scattering in GaN

Abstract:

Hot carrier relaxation has been investigated in GaN using non-resonant femtosecond excitation where electrons are excited above and below the LO phonon energy. We observe remarkably rapid electron relaxation; the electron distribution is non-thermal, with a "cut-off" occurring near ELO. In a preliminary Monte Carlo study we have simulations which reproduce the major experimental observations, confirming the development of a non-thermal electron distribution near ELO due to the strong electron...

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
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Journal:
Physica Status Solidi (B) Basic Research
Volume:
216
Issue:
1
Pages:
51-55
Publication date:
1999-11-05
ISSN:
0370-1972
URN:
uuid:650ea14e-efb5-4202-8b29-864fe624cb1b
Source identifiers:
134680
Local pid:
pubs:134680
Language:
English

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