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Journal article

THE CHARACTERIZATION OF SILICON SURFACES BY TIME-OF-FLIGHT ATOM PROBE ANALYSIS

Abstract:
New results are presented on the analysis of silicon surfaces in a Time-of-Flight Atom Probe. Comparison is made between the chemical data obtained from conventional voltage pulse and laser pulse desorption. © 1982.
Publication status:
Published

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Authors


GROVENOR, C More by this author
Journal:
SURFACE SCIENCE
Volume:
123
Issue:
1
Pages:
L686-L692
Publication date:
1982
DOI:
ISSN:
0039-6028
URN:
uuid:647c61b7-3591-4289-bd41-9f0e17e3a020
Source identifiers:
23771
Local pid:
pubs:23771
Language:
English

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