Journal article
Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
- Abstract:
-
We report direct evidence for the control of the oscillator strength of the exciton state in a single quantum dot by the application of a vertical electric field. This is achieved through the study of the radiative lifetime of a single InGaN-GaN quantum dot in a p-i-n diode structure. Our results are in good quantitative agreement with theoretical predictions from an atomistic tight-binding model. Furthermore, the increase of the overlap between the electron and hole wave functions due to the...
Expand abstract
- Publication status:
- Published
- Peer review status:
- Peer reviewed
Actions
Access Document
- Files:
-
-
(Preview, Version of record, pdf, 739.4KB, Terms of use)
-
- Publisher copy:
- 10.1103/PhysRevLett.99.197403
Authors
Funding
+ Engineering and Physical Sciences Research Council
More from this funder
Funding agency for:
Jarjour, A
Taylor, R
Grant:
GR/S82176/01
GR/S82176/01
Bibliographic Details
- Publisher:
- American Physical Society
- Journal:
- Physical Review Letters More from this journal
- Volume:
- 99
- Issue:
- 19
- Pages:
- 197403
- Publication date:
- 2007-11-01
- DOI:
- EISSN:
-
1079-7114
- ISSN:
-
0031-9007
Item Description
- Language:
-
English
- Keywords:
- Subjects:
- UUID:
-
uuid:5fbfe905-6b78-4cdb-878a-36a0f5bff2cd
- Local pid:
-
ora:1616
- Deposit date:
-
2008-03-14
Terms of use
- Copyright holder:
- American Physical Society
- Copyright date:
- 2007
- Notes:
- Citation: Jarjour, A. F. et al. (2007). 'Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot', Physical Review Letters, 99(19), 197403. [Available at http://prl.aps.org/]. Copyright 2007 by the American Physical Society.
Metrics
If you are the owner of this record, you can report an update to it here: Report update to this record