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Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition

Abstract:
We report a two-temperature procedure for the growth of GaAs nanowires by metalorganic chemical vapour deposition. An initial high temperature step affords effective nucleation and promotes epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise nanowire tapering during growth. © 2006 IEEE.

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Publisher copy:
10.1109/COMMAD.2006.4429908

Authors


Pages:
172-175
Host title:
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Publication date:
2006-01-01
DOI:
Source identifiers:
172719
ISBN-10:
1424405785
ISBN-13:
9781424405787
Keywords:
Pubs id:
pubs:172719
UUID:
uuid:5ea0a48f-d229-4672-b2f6-dab160c3b692
Local pid:
pubs:172719
Deposit date:
2012-12-19

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