- Abstract:
- We report a two-temperature procedure for the growth of GaAs nanowires by metalorganic chemical vapour deposition. An initial high temperature step affords effective nucleation and promotes epitaxial growth of straight (111)B-oriented nanowires. Lower temperatures are employed subsequently, to minimise nanowire tapering during growth. © 2006 IEEE.
- Publisher copy:
- 10.1109/COMMAD.2006.4429908
-
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- Pages:
- 172-175
- Publication date:
- 2006-01-01
- DOI:
- URN:
-
uuid:5ea0a48f-d229-4672-b2f6-dab160c3b692
- Source identifiers:
-
172719
- Local pid:
- pubs:172719
- ISBN-10:
- 1424405785
- ISBN-13:
- 9781424405787
- Keywords:
- Copyright date:
- 2006
Conference
Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition
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