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Monte Carlo simulation of growth of porous SiOx by vapor deposition.

Abstract:

A random network model containing defects has been developed and applied to the deposition of amorphous SiOx films on a flat substrate. A new Monte Carlo procedure enables dangling bonds to migrate and annihilate. The degree of porosity in the films is found to increase with oxygen content. As the oxygen content increases a larger fraction of pore surfaces is covered with oxygen, and the density of dangling bonds on pore surfaces decreases. Oxygen plays the role of a surfactant, lowering the ...

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Publication status:
Published

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Publisher copy:
10.1103/physrevlett.86.3052

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
Physical Review Letters
Volume:
86
Issue:
14
Pages:
3052-3055
Publication date:
2001-04-01
DOI:
EISSN:
1079-7114
ISSN:
0031-9007
Source identifiers:
28533
Language:
English
Pubs id:
pubs:28533
UUID:
uuid:5dafa00f-e432-415c-b88d-c7acaa68d8e9
Local pid:
pubs:28533
Deposit date:
2012-12-19

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