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Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy

Abstract:

Ultrasonic Force Microscopy (UFM) has been applied to detect the mechanical compliance of semiconductors at the nanometer (nm) scale. UFM of Si and SiGe heterostructures reveals a sensitivity to 2.5 nm thin films. Structures and damage generated during implantation and milling of Si with a focused ion beam are also characterized. This provides novel insight into the topographic and mechanical consequences of ion implantation for doses down to 10(14) ions/cm(2). The experimental results for bo...

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Publication status:
Published

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Authors


Langford, RM More by this author
Briggs, GAD More by this author
Kolosov, OV More by this author
Issue:
169
Pages:
531-534
Publication date:
2001
ISSN:
0951-3248
URN:
uuid:5d865529-7f91-4489-8710-c19639a7d4dd
Source identifiers:
2458
Local pid:
pubs:2458
ISBN:
0-7503-0818-4

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