Growth of In(2)O(3)(100) on Y-stabilized ZrO(2)(100) by O-plasma assisted molecular beam epitaxy
- Thin films of In2 O3 have been grown on Y-stabilized Zr O2 (100) by oxygen plasma assisted molecular beam epitaxy with a substrate temperature of 650 °C. Ordered epitaxial growth was confirmed by high resolution transmission electron microscopy. The position of the valence band onset in the x-ray photoemission spectra of the epitaxial films is found to be inconsistent with the widely quoted value of 3.75 eV for the fundamental bandgap of In2 O3 and suggests a revised value of 2.67 eV. © 2008 American Institute of Physics.
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