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Growth of In(2)O(3)(100) on Y-stabilized ZrO(2)(100) by O-plasma assisted molecular beam epitaxy

Abstract:
Thin films of In2 O3 have been grown on Y-stabilized Zr O2 (100) by oxygen plasma assisted molecular beam epitaxy with a substrate temperature of 650 °C. Ordered epitaxial growth was confirmed by high resolution transmission electron microscopy. The position of the valence band onset in the x-ray photoemission spectra of the epitaxial films is found to be inconsistent with the widely quoted value of 3.75 eV for the fundamental bandgap of In2 O3 and suggests a revised value of 2.67 eV. © 2008 American Institute of Physics.
Publication status:
Published

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Publisher copy:
10.1063/1.2889500

Authors


Bourlange, A More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Physical and Theoretical Chem
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
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Journal:
APPLIED PHYSICS LETTERS
Volume:
92
Issue:
9
Pages:
092117-092117
Publication date:
2008-03-03
DOI:
ISSN:
0003-6951
URN:
uuid:5c90f2fc-7469-4714-ae51-345d4237648d
Source identifiers:
2191
Local pid:
pubs:2191
Language:
English

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