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The effect of optically-induced random anisotropic disorder on a two-dimensional electron system

Abstract:
We have studied the effect of optically-induced random, anisotropic disorder on the magnetoresistance of a Al0.3Ga0.7As/ GaAs two-dimensional electron system by exposing the heterojunction to an asymmetric laser speckle pattern. Changes in the amplitude of the Shubnikov-de Haas oscillations can be explained in terms of easy and hard conductivity paths parallel and perpendicular to the long axis of the oval speckle grains. We also observe corresponding changes in the electron scattering rates. © 2006 Elsevier Ltd. All rights reserved.
Publication status:
Published

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Publisher copy:
10.1016/j.ssc.2006.05.049

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Theoretical Physics
Role:
Author
Volume:
140
Issue:
2
Pages:
94-99
Publication date:
2006-10-05
DOI:
ISSN:
0038-1098
URN:
uuid:5b870b25-4d63-49e7-b40d-a76586c897a1
Source identifiers:
168147
Local pid:
pubs:168147

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