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Journal article

Secondary electron emission contrast of quantum wells in GaAs p-i-n junctions.

Abstract:

The secondary electron (SE) signal over a cleaved surface of GaAs p-i-n solar cells containing stacks of quantum wells (QWs) is analyzed by high-resolution scanning electron microscopy. The InGaAs QWs appear darker than the GaAsP barriers, which is attributed to the differences in electron affinity. This method is shown to be a powerful tool for profiling the conduction band minimum across junctions and interfaces with nanometer resolution. The intrinsic region is shown to be pinned to the Fe...

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Publication status:
Published

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Publisher copy:
10.1017/s1431927609090205

Authors


Grunbaum, E More by this author
Shapira, Y More by this author
Barnham, KW More by this author
Bushnell, DB More by this author
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Journal:
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
Volume:
15
Issue:
2
Pages:
125-129
Publication date:
2009-04-05
DOI:
EISSN:
1435-8115
ISSN:
1431-9276
URN:
uuid:5922f941-31ed-4616-a109-c8fdd6adbfa4
Source identifiers:
502423
Local pid:
pubs:502423

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