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Dynamics of single InGaN quantum dots

Abstract:
Decay dynamics for single InGaN quantum dots are presented using time-resolved photoluminescence. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the 2D wetting layer. The lifetimes of single dots in the temperature range 4-60 K decrease with increasing temperature. Different dots show similar lifetimes of similar to 2 ns. (C) 2003 Elsevier B.V. All rights reserved.
Publication status:
Published

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Publisher copy:
10.1016/j.physe.2003.11.022

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
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Journal:
PHYSICA E-LOW-DIMENSIONAL SYSTEMS and NANOSTRUCTURES
Volume:
21
Issue:
2-4
Pages:
285-289
Publication date:
2004-03-01
Event title:
11th International Conference on Modulated Semiconductor Structures (MSS11)
DOI:
ISSN:
1386-9477
Source identifiers:
14589
Keywords:
Pubs id:
pubs:14589
UUID:
uuid:57bb01e9-4f8e-4186-b702-ba3bc53d2870
Local pid:
pubs:14589
Deposit date:
2012-12-19

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