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Effective antireflection and surface passivation of silicon using a SiO2/a-TiOx film stack

Abstract:

This article reports an effective and industrially relevant passivation and anti-reflection film stack featuring a 10 nm silicon dioxide (SiO2) film followed by a »65 nm amorphous titanium oxide (a-TiOx) film. This film stack has equivalent optical performance to a single-layer silicon nitride (SiNx) antireflection coating (ARC) for unencapsulated cells, and slightly better performance for encapsulated cells (»0.2 mA×cm-2 increase). The field effect passivation properties of the SiO2/aTiOx fi...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted Manuscript

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Publisher copy:
10.1109/JPHOTOV.2017.2753198

Authors


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Department:
Exeter College
Schneller, EJ More by this author
Schoenfeld, WV More by this author
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Department:
Oxford, MPLS, Materials
Publisher:
IEEE Publisher's website
Journal:
IEEE Journal of Photovoltaics Journal website
Volume:
7
Issue:
6
Pages:
1603-1610
Publication date:
2017-10-03
Acceptance date:
2017-09-13
DOI:
EISSN:
2156-3403
ISSN:
2156-3381
Pubs id:
pubs:728886
URN:
uri:5701aa28-9770-477a-8452-7f4e8e708714
UUID:
uuid:5701aa28-9770-477a-8452-7f4e8e708714
Local pid:
pubs:728886
Paper number:
6

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