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FIELD-EMISSION SEM IMAGING OF COMPOSITIONAL AND DOPING LAYER SEMICONDUCTOR SUPERLATTICES

Abstract:

Field-emission scanning electron microscopy (FE-SEM) has been used to study several semiconductor multilayer heterostructures. Compositional superlattices based on GexSi1-x/Si and AlxGa1-xAs/GaAs have been studied in both cross-sectional and oblique plan-views after indentation. Secondary and backscattered electron images reveal strong atomic number contrast which is primarily structural in origin. Secondly, for the first time, heterostructures containing n and p doping have been directly ima...

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Publication status:
Published

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Authors


PEROVIC, D More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
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Volume:
58
Issue:
1
Pages:
104-113
Publication date:
1995-04-05
DOI:
ISSN:
0304-3991
URN:
uuid:5677b5c4-72f2-4fe2-8695-089947f59177
Source identifiers:
19506
Local pid:
pubs:19506

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