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Quantum Hall effect from the topological surface states of strained bulk HgTe.

Abstract:
We report transport studies on a three-dimensional, 70-nm-thick HgTe layer, which is strained by epitaxial growth on a CdTe substrate. The strain induces a band gap in the otherwise semimetallic HgTe, which thus becomes a three-dimensional topological insulator. Contributions from residual bulk carriers to the transport properties of the gapped HgTe layer are negligible at mK temperatures. As a result, the sample exhibits a quantized Hall effect that results from the 2D single cone Dirac-like topological surface states.
Publication status:
Published

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Authors


Hankiewicz, EM More by this author
Buhmann, H More by this author
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Journal:
Physical review letters
Volume:
106
Issue:
12
Pages:
126803
Publication date:
2011-03-05
DOI:
EISSN:
1079-7114
ISSN:
0031-9007
URN:
uuid:566d8616-c9b1-47b0-b098-f8389afbb274
Source identifiers:
214275
Local pid:
pubs:214275
Language:
English

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