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Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs

Abstract:

Semiconductor InGaAs/GaAs heterostructures grown by molecular beam epitaxy have been studied using low temperature (5K) cathodoluminescence as part of a project to determine the mechanisms of misfit dislocation nucleation. The samples studied contain oval defects which give rise to a large number of misfit dislocations. Also associated with the oval defects is a highly luminescent halo which gives rise to a peak on the low energy side of the InGaAs peak in the CL spectrum. The dislocation den...

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Publication status:
Published

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Publisher copy:
10.1109/COMMAD.1996.610091

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS
Pages:
138-141
Publication date:
1996-01-01
Event title:
1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9)
DOI:
Source identifiers:
9388
ISBN:
0780333748
Pubs id:
pubs:9388
UUID:
uuid:5470745c-beef-48ab-8f33-45626546704d
Local pid:
pubs:9388
Deposit date:
2012-12-19

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