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Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs

Abstract:

Semiconductor InGaAs/GaAs heterostructures grown by molecular beam epitaxy have been studied using low temperature (5K) cathodoluminescence as part of a project to determine the mechanisms of misfit dislocation nucleation. The samples studied contain oval defects which give rise to a large number of misfit dislocations. Also associated with the oval defects is a highly luminescent halo which gives rise to a peak on the low energy side of the InGaAs peak in the CL spectrum. The dislocation den...

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Publication status:
Published

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Publisher copy:
10.1109/COMMAD.1996.610091

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Pages:
138-141
Publication date:
1996-01-01
DOI:
URN:
uuid:5470745c-beef-48ab-8f33-45626546704d
Source identifiers:
9388
Local pid:
pubs:9388
ISBN:
0-7803-3374-8

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