- Abstract:
-
Semiconductor InGaAs/GaAs heterostructures grown by molecular beam epitaxy have been studied using low temperature (5K) cathodoluminescence as part of a project to determine the mechanisms of misfit dislocation nucleation. The samples studied contain oval defects which give rise to a large number of misfit dislocations. Also associated with the oval defects is a highly luminescent halo which gives rise to a peak on the low energy side of the InGaAs peak in the CL spectrum. The dislocation den...
Expand abstract - Publication status:
- Published
- Publisher copy:
- 10.1109/COMMAD.1996.610091
-
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- Pages:
- 138-141
- Publication date:
- 1996-01-01
- DOI:
- URN:
-
uuid:5470745c-beef-48ab-8f33-45626546704d
- Source identifiers:
-
9388
- Local pid:
- pubs:9388
- ISBN:
- 0-7803-3374-8
- Copyright date:
- 1996
Conference
Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
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