Conference item
Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
- Abstract:
-
Semiconductor InGaAs/GaAs heterostructures grown by molecular beam epitaxy have been studied using low temperature (5K) cathodoluminescence as part of a project to determine the mechanisms of misfit dislocation nucleation. The samples studied contain oval defects which give rise to a large number of misfit dislocations. Also associated with the oval defects is a highly luminescent halo which gives rise to a peak on the low energy side of the InGaAs peak in the CL spectrum. The dislocation den...
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- Publication status:
- Published
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- Publisher copy:
- 10.1109/COMMAD.1996.610091
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Bibliographic Details
- Journal:
- 1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS
- Pages:
- 138-141
- Publication date:
- 1996-01-01
- Event title:
- 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9)
- DOI:
- Source identifiers:
-
9388
- ISBN:
- 0780333748
Item Description
- Pubs id:
-
pubs:9388
- UUID:
-
uuid:5470745c-beef-48ab-8f33-45626546704d
- Local pid:
- pubs:9388
- Deposit date:
- 2012-12-19
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- Copyright date:
- 1996
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