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Minority carrier lifetime in Czochralski silicon containing oxide precipitates

Abstract:

Photoconductance methods were used to measure minority carrier lifetime in p-type Czochralski silicon processed under very clean conditions to contain oxide precipitates. 24 different sample types were characterised by chemical etching and transmission electron microscopy to determine the density and morphology of the precipitates. For samples processed to contain mainly unstrained precipitates, the lifetime component associated with oxide precipitates was extremely high (up to 4.5ms at an in...

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Publisher copy:
10.1149/1.3485687

Authors


Murphy, JD More by this author
Voronkov, VV More by this author
Falster, RJ More by this author
Journal:
ECS Transactions
Volume:
33
Issue:
11
Pages:
121-132
Publication date:
2010
DOI:
EISSN:
1938-6737
ISSN:
1938-5862
URN:
uuid:54620267-f609-4b9d-969f-ecd75b0048be
Source identifiers:
320567
Local pid:
pubs:320567
Language:
English

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