Journal article

Growth modes in heteroepitaxy of InGaN on GaN

Publication status:: Published

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APA Style

Oliver, R., Kappers, M., Humphreys, C., & Briggs, G. (2005). Growth modes in heteroepitaxy of InGaN on GaN. JOURNAL OF APPLIED PHYSICS, 97(1), 013707–013707.

MLA Style

Oliver, R., et al. “Growth Modes in Heteroepitaxy of InGaN on GaN.” JOURNAL OF APPLIED PHYSICS, vol. 97, no. 1, 2005, pp. 013707–07.

Chicago Style

Oliver, R, M Kappers, C Humphreys, and G Briggs. 2005. “Growth Modes in Heteroepitaxy of InGaN on GaN.” JOURNAL OF APPLIED PHYSICS 97 (1): 013707–.
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Publisher copy:: 10.1063/1.1823581

Authors

+ Oliver, R More by this author

Role:: Author

+ Kappers, M More by this author

Role:: Author

+ Humphreys, C More by this author

Role:: Author

+ Briggs, G More by this author

Role:: Author

Journal:: JOURNAL OF APPLIED PHYSICS More from this journal
Volume:: 97
Issue:: 1
Pages:: 013707-013707
Publication date:: 2005-01-01
DOI:: 10.1063/1.1823581
ISSN:: 0021-8979

Pubs id:: pubs:174519
UUID:: uuid:544a4709-36d6-497d-acaa-e17c61e45190
Local pid:: pubs:174519
Source identifiers:: 174519
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 2005

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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