Journal article icon

Journal article

Chemical and structural investigations of the incorporation of metal manganese into ruthenium thin films for use as copper diffusion barrier layers

Abstract:

The incorporation of manganese into a 3 nm ruthenium thin-film is presented as a potential mechanism to improve its performance as a copper diffusion barrier. Manganese (∼1 nm) was deposited on an atomic layer deposited Ru film, and the Mn/Ru/SiO2 structure was subsequently thermally annealed. X-ray photoelectron spectroscopy studies reveal the chemical interaction of Mn with the SiO2 substrate to form manganese-silicate (MnSiO3), implying the migration of the metal through the Ru film. Elect...

Expand abstract
Publication status:
Published

Actions


Access Document


Publisher copy:
10.1063/1.4769229

Authors


Lozano, JG More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Expand authors...
Journal:
APPLIED PHYSICS LETTERS
Volume:
101
Issue:
23
Pages:
231603-231603
Publication date:
2012-12-03
DOI:
ISSN:
0003-6951
URN:
uuid:534e08ce-6619-4e16-b600-0ecf025e9030
Source identifiers:
368622
Local pid:
pubs:368622
Language:
English

Terms of use


Metrics



If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP