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The structural characterisation of molecular beam epitaxy-grown exchange-biased bilayers

Abstract:

NiFe/FeMn exchange-biased thin films were grown in an applied magnetic field of approximately 200 Oe using molecular beam epitaxy. In order to obtain the optimum conditions for the epitaxial growth of the thin films, various chemical treatments of the Si(1 1 1) substrates and insertion of a Cu buffer layer were used. The 7 × 7 surface reconstruction of Si(1 1 1) was found out to be the crucial factor for the epitaxial growth. This surface promotes the reaction of Si with the Cu buffer layer t...

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Publication status:
Published

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Authors


Petford-Long, AK More by this author
Journal:
THIN SOLID FILMS
Volume:
413
Issue:
1-2
Pages:
41-45
Publication date:
2002-06-24
DOI:
ISSN:
0040-6090
URN:
uuid:52a20ea4-50df-4d53-8dae-0de2469f6805
Source identifiers:
202690
Local pid:
pubs:202690

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