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SIMULTANEOUS OBSERVATION OF ALPHA-DISLOCATION AND BETA-DISLOCATION MOVEMENT AND THEIR EFFECT ON THE FRACTURE-BEHAVIOR OF GAAS

Abstract:
Micro-indentation of the left brace 001 right brace surface of GaAs over a range of temperatures produces asymmetric patterns of dislocation rosettes and median/radial crack systems. A model is proposed for the geometry of slip around the indentation which explains the asymmetry in the rosette pattern as being due to the different mobilities of the alpha and beta dislocations in GaAs. It is suggested that the asymmetry of the crack pattern around the indentation is due to the interaction of dislocations with the crack propagation.
Publication status:
Published

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Journal:
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES
Volume:
50
Issue:
5
Pages:
L23-L28
Publication date:
1984-01-01
ISSN:
0141-8610
Source identifiers:
6326
Language:
English
Pubs id:
pubs:6326
UUID:
uuid:52382238-878b-4d18-9175-5423649632e7
Local pid:
pubs:6326
Deposit date:
2012-12-19

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