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Controlled field effect surface passivation of crystalline n-type silicon and its application to back-contact silicon solar cells

Abstract:

Surface passivation continues to be a significant requirement in achieving high solar-cell efficiency. Single layers of SiO2 and double layers of SiO2/SiN surface passivation have been widely used to reduce surface carrier recombination in silicon solar cells. Passivation films reduce surface recombination by a combination of chemical and electric field effect components. Dielectric films used for this purpose, however, must also accomplish optical functions at the cell surface. In this paper...

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Publisher copy:
10.1109/PVSC.2014.6924985

Authors


Bonilla, RS More by this author
Reichel, C More by this author
Senkader, S More by this author
Wilshaw, P More by this author
Publisher:
Institute of Electrical and Electronics Engineers Inc.
Pages:
571-576
Publication date:
2014-10-15
DOI:
URN:
uuid:51333de1-d080-4995-b6a6-fb3485b5a3f6
Source identifiers:
502425
Local pid:
pubs:502425
ISBN:
9781479943982

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