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Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems

Abstract:
The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at similar to 2.3 mum. (C) 2003 Elsevier B.V. All rights reserved.
Publication status:
Published

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Publisher copy:
10.1016/j.physe.2003.08.004

Authors


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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Shields, PA More by this author
Alphandery, E More by this author
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Volume:
20
Issue:
3-4
Pages:
204-210
Publication date:
2004-01-05
DOI:
ISSN:
1386-9477
URN:
uuid:4f0cd674-23a0-4095-87e5-e6b1b92c7678
Source identifiers:
17722
Local pid:
pubs:17722

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