Conference icon

Conference

Suppression of dislocation activity in strained epilayers

Abstract:
A new technique where a stress opposing the misfit stress is applied to the strained layers allows study of the conditions under which dislocations nucleate and propagate. Using this technique it is possible to suppress dislocation nucleation and reduce dislocation velocities at different stress levels without changing the epilayer thickness or the composition of the layer. The activation energy for the nucleation of dislocations at "natural" heterogeneous dislocation sources was determined to E-n=0.6 - 0.7 eV.
Publication status:
Published

Actions


Authors


More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Pages:
844-854
Publication date:
1998-01-01
URN:
uuid:4d8d97da-8bb9-4722-a02e-78a587403d35
Source identifiers:
15838
Local pid:
pubs:15838
ISBN:
1-56677-193-5

Terms of use


Metrics


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP