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Suppression of dislocation activity in strained epilayers

Abstract:
A new technique where a stress opposing the misfit stress is applied to the strained layers allows study of the conditions under which dislocations nucleate and propagate. Using this technique it is possible to suppress dislocation nucleation and reduce dislocation velocities at different stress levels without changing the epilayer thickness or the composition of the layer. The activation energy for the nucleation of dislocations at "natural" heterogeneous dislocation sources was determined to E-n=0.6 - 0.7 eV.
Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2
Pages:
844-854
Publication date:
1998-01-01
Event title:
8th International Symposium on Silicon Materials Science and Technology
Source identifiers:
15838
ISBN:
1566771935
Pubs id:
pubs:15838
UUID:
uuid:4d8d97da-8bb9-4722-a02e-78a587403d35
Local pid:
pubs:15838
Deposit date:
2012-12-19

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