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Carrier generation within the surface region of hydrogenated thin film polycrystalline diamond

Abstract:

Low temperature Hall effect measurements made on diamond films subjected to a hydrogenation process, such that the near surface region becomes p-type without the addition of conventional dopant atoms, are reported. The carrier concentration within the temperature range 10-300 K does not change as expected for most films, actually increasing as the temperature falls. However, polished films display more conventional behaviour in that the carrier concentration falls with falling temperature. A ...

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Publication status:
Published

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Authors


Williams, OA More by this author
Whitfield, MD More by this author
Jackman, RB More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Physical and Theoretical Chem
Butler, JE More by this author
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Volume:
10
Issue:
3-7
Pages:
423-428
Publication date:
2001
DOI:
ISSN:
0925-9635
URN:
uuid:4b128e12-ea53-4cc0-909f-8b8360504dc2
Source identifiers:
37881
Local pid:
pubs:37881

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