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Controlling sulphur precursor addition for large single crystal domains of WS2.

Abstract:

We show that controlling the introduction time and the amount of sulphur (S) vapour relative to the WO3 precursor during the chemical vapour deposition (CVD) growth of WS2 is critical to achieving large crystal domains on the surface of silicon wafers with a 300 nm oxide layer. We use a two furnace system that enables the S precursor to be separately heated from the WO3 precursor and growth substrate. Accurate control of the S introduction time enabled the formation of triangular WS2 domains ...

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Publication status:
Published

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Publisher copy:
10.1039/c4nr04091k

Authors


Leen Koh, A More by this author
Robertson, AW More by this author
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Publisher:
Royal Society of Chemistry
Journal:
Nanoscale
Volume:
6
Issue:
20
Pages:
12096-12103
Publication date:
2014-10-05
DOI:
EISSN:
2040-3372
ISSN:
2040-3364
URN:
uuid:4b03ebfa-23b8-49e8-8cb2-7de4656d6a27
Source identifiers:
484076
Local pid:
pubs:484076
Language:
English

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