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On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation

Abstract:

Dielectric double layers of thermal silicon dioxide-chemical vapour deposition (CVD) silicon nitride are found to produce excellent passivation of silicon surfaces by combining a chemical reduction of surface defect states, with a field effect reduction of carriers at the surface due to charge in the dielectrics. The charge present in such double-layers has previously been attributed to be characteristic of the interface between the two. However, experimental evidence shows this is indirect a...

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Publication status:
Published

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Publisher copy:
10.1063/1.4871075

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Publisher:
American Institute of Physics Inc.
Journal:
JOURNAL OF APPLIED PHYSICS
Volume:
115
Issue:
14
Pages:
144105-144105
Publication date:
2014-04-14
DOI:
EISSN:
1089-7550
ISSN:
0021-8979
URN:
uuid:49f01425-1e86-4d4b-915c-fac740fb79e0
Source identifiers:
465770
Local pid:
pubs:465770
Language:
English

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