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Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion

Abstract:

The locking of dislocations by oxygen atoms in Czochralski-silicon at temperatures between 350 and 700°C has been studied. Both experimental and theoretical investigations were carried out for different oxygen concentrations, different annealing times (from 10 to 3 × 107 s), and different point defect concentrations. It was found that the unlocking stress of dislocations at low temperatures follows similar trends to those previously observed at higher temperatures and is determined by anneali...

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Publication status:
Published

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Publisher copy:
10.1063/1.1359424

Authors


Senkader, S More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Falster, RJ More by this author
Journal:
JOURNAL OF APPLIED PHYSICS
Volume:
89
Issue:
9
Pages:
4803-4808
Publication date:
2001-05-01
DOI:
ISSN:
0021-8979
URN:
uuid:49d2dfb4-3757-49b5-a819-72cc5cb81822
Source identifiers:
25470
Local pid:
pubs:25470
Language:
English

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