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Growth of Single-Walled Carbon Nanotubes Using Germanium Nanocrystals Formed by Implantation

Abstract:

This paper presents a complementary metal oxide semiconductor compatible method for the chemical vapor deposition of single-walled carbon nanotubes (SWNTs). The method uses Ge implantation into a SiO2 layer to create Ge nanocrystals, which are then used to produce SWNTs. The results of atomic force microscopy and scanning electron microscopy analyses indicate that Ge implantation provides good control of particle size and delivers a well-controlled SWNT growth process. The SWNT area density o...

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Publication status:
Published

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Publisher copy:
10.1149/1.3147248

Authors


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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
de Groot, CH More by this author
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Journal:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume:
156
Issue:
8
Pages:
K144-K148
Publication date:
2009
DOI:
ISSN:
0013-4651
URN:
uuid:49441f9d-bfea-47e3-86dc-47e49455a312
Source identifiers:
8472
Local pid:
pubs:8472

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