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SURFACE CHEMICAL STUDIES OF THE INFLUENCE OF IN AND AL ON THE DECOMPOSITION OF TEG ON GAAS(100)

Abstract:

The interaction of triethylgallium (TEG) with the Ga-stabilized GaAs(100) surface in the presence of In and Al has been investigated using AES (Auger electron spectroscopy), HREELS (high resolution electron energy loss spectroscopy) and TDS (thermal desorption spectroscopy) techniques. Al is shown to greatly increase the saturation surface coverage of TEG on the surface and to suppress the desorption of TEG and diethylgallium (DEG). Etching of the surface Al by TEG is observed, resulting in t...

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Publication status:
Published

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Authors


FITZGERALD, E More by this author
Volume:
120
Issue:
1-4
Pages:
57-62
Publication date:
1992-05-05
DOI:
ISSN:
0022-0248
URN:
uuid:489e68d0-aa88-4ee8-8a63-f242d1a511ec
Source identifiers:
43919
Local pid:
pubs:43919

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