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Exciton recombination dynamics in ZnCdSe/ZnsSe quantum wells

Abstract:
We present results of time-resolved luminescence experiments performed on Zn0.80Cd0.20Se/ZnSe quantum well laser structures as a function of carrier density and temperature. It is found that in narrow wells, where quantum confinement effects are strong, the luminescence is excitonic over all temperatures at densities up to and above threshold. For wide wells the luminescence is observed to cross over to a bimolecular decay profile at high temperature and density, which corresponds to the formation of a correlated electron-hole plasma.

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
Journal:
Journal of Crystal Growth
Volume:
159
Issue:
1-4
Pages:
822-825
Publication date:
1996-02-05
ISSN:
0022-0248
URN:
uuid:4826db1b-2890-4c7c-bc97-7b973c0e15fa
Source identifiers:
134700
Local pid:
pubs:134700
Language:
English

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