Journal article
Exciton recombination dynamics in ZnCdSe/ZnsSe quantum wells
- Abstract:
- We present results of time-resolved luminescence experiments performed on Zn0.80Cd0.20Se/ZnSe quantum well laser structures as a function of carrier density and temperature. It is found that in narrow wells, where quantum confinement effects are strong, the luminescence is excitonic over all temperatures at densities up to and above threshold. For wide wells the luminescence is observed to cross over to a bimolecular decay profile at high temperature and density, which corresponds to the formation of a correlated electron-hole plasma.
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Bibliographic Details
- Journal:
- Journal of Crystal Growth
- Volume:
- 159
- Issue:
- 1-4
- Pages:
- 822-825
- Publication date:
- 1996-02-01
- ISSN:
-
0022-0248
- Source identifiers:
-
134700
Item Description
- Language:
- English
- Pubs id:
-
pubs:134700
- UUID:
-
uuid:4826db1b-2890-4c7c-bc97-7b973c0e15fa
- Local pid:
- pubs:134700
- Deposit date:
- 2012-12-19
Terms of use
- Copyright date:
- 1996
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