Exciton recombination dynamics in ZnCdSe/ZnsSe quantum wells

Taylor, RA; Adams, RA; Ryan, JF; Park, RM

Abstract:

We present results of time-resolved luminescence experiments performed on Zn0.80Cd0.20Se/ZnSe quantum well laser structures as a function of carrier density and temperature. It is found that in narrow wells, where quantum confinement effects are strong, the luminescence is excitonic over all temperatures at densities up to and above threshold. For wide wells the luminescence is observed to cross over to a bimolecular decay profile at high temperature and density, which corresponds to the formation of a correlated electron-hole plasma.

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APA Style

Taylor, R. A., Adams, R. A., Ryan, J. F., & Park, R. M. (1996). Exciton recombination dynamics in ZnCdSe/ZnsSe quantum wells. Journal of Crystal Growth, 159(1-4), 822–825.

MLA Style

Taylor, R. A., et al. “Exciton Recombination Dynamics in ZnCdSe/ZnsSe Quantum Wells.” Journal of Crystal Growth, vol. 159, no. 1-4, 1996, pp. 822–25.

Chicago Style

Taylor, RA, RA Adams, JF Ryan, and RM Park. 1996. “Exciton Recombination Dynamics in ZnCdSe/ZnsSe Quantum Wells.” Journal of Crystal Growth 159 (1-4): 822–25.
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