Journal article icon

Journal article

Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging

Abstract:

In the present paper the authors describe the use of electron backscatter diffraction (EBSD) mapping and electron channelling contrast imaging (in the scanning electron microscope) to study tilt, strain, atomic steps and dislocations in epitaxial GaN thin films. Results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film are shown. From the results it is deduced that EBSD may be used to measure orientation changes of the order of 0-02° and strai...

Expand abstract
Publication status:
Published

Actions


Access Document


Publisher copy:
10.1179/174328406X130957

Authors


Trager-Cowan, C More by this author
Sweeney, F More by this author
Winkelmann, A More by this author
Wilkinson, AJ More by this author
Trimby, PW More by this author
Expand authors...
Journal:
MATERIALS SCIENCE AND TECHNOLOGY
Volume:
22
Issue:
11
Pages:
1352-1358
Publication date:
2006-11-05
DOI:
EISSN:
1743-2847
ISSN:
0267-0836
URN:
uuid:47cb056a-a969-47de-bbfd-89adbe36aa29
Source identifiers:
5832
Local pid:
pubs:5832

Terms of use


Metrics



If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP