Journal article
Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging
- Abstract:
-
In the present paper the authors describe the use of electron backscatter diffraction (EBSD) mapping and electron channelling contrast imaging (in the scanning electron microscope) to study tilt, strain, atomic steps and dislocations in epitaxial GaN thin films. Results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film are shown. From the results it is deduced that EBSD may be used to measure orientation changes of the order of 0-02° and strai...
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- Publication status:
- Published
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- Publisher copy:
- 10.1179/174328406X130957
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Authors
Bibliographic Details
- Journal:
- MATERIALS SCIENCE AND TECHNOLOGY
- Volume:
- 22
- Issue:
- 11
- Pages:
- 1352-1358
- Publication date:
- 2006-11-05
- DOI:
- EISSN:
-
1743-2847
- ISSN:
-
0267-0836
- URN:
-
uuid:47cb056a-a969-47de-bbfd-89adbe36aa29
- Source identifiers:
-
5832
- Local pid:
- pubs:5832
Item Description
- Language:
- English
- Keywords:
Terms of use
- Copyright date:
- 2006
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