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Cathodoluminescence assessment of annealed silicon and a novel technique for estimating minority carrier lifetime in silicon

Abstract:

The effect of low-temperature anneals (≤500 °C) on Cz-Si minority carrier lifetime has been investigated using near-band-edge cathodoluminescence (CL). The low-temperature anneals are intended to produce efficient gettering by taking advantage of the increasing supersaturation of impurities as temperatures are reduced. It is found that the anneals affect the CL efficiency through several different mechanisms and that annealing under "dirty" conditions does not introduce significant amounts of...

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Publication status:
Published

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Publisher copy:
10.1016/j.mseb.2008.05.006

Authors


Fraser, KJ More by this author
Falster, RJ More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Volume:
159-60
Issue:
C
Pages:
194-197
Publication date:
2009-03-15
DOI:
ISSN:
0921-5107
URN:
uuid:477f8ff4-da22-4a78-8cad-930bbc25f227
Source identifiers:
3371
Local pid:
pubs:3371

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